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Radiation-Induced Surface States in MOS Devices.
- Source :
- IEEE Transactions on Nuclear Science; 1975, Vol. 22 Issue 6, p2193-2196, 4p
- Publication Year :
- 1975
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 22
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 93138215
- Full Text :
- https://doi.org/10.1109/TNS.1975.4328104