An asymmetric sidewall process for high performance LDD MOSFET's.

Details

Language :

English

ISSN :

00189383

Volume :

41

Issue :

2

Database :

Complementary Index

Journal :

IEEE Transactions on Electron Devices

Publication Type :

Academic Journal

Accession number :

93119300

Full Text :

https://doi.org/10.1109/16.277381