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Anisotype-gate self-aligned p-channel heterostructure field-effect transistors.
- Source :
- IEEE Transactions on Electron Devices; 1993, Vol. 40 Issue 2, p278-284, 7p
- Publication Year :
- 1993
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 40
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 93118858
- Full Text :
- https://doi.org/10.1109/16.182501