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Heavily Zn-doped graded-base AlGaAs/GaAs HBTs grown by MOCVD.
- Source :
- IEEE Transactions on Electron Devices; 1991, Vol. 38 Issue 6, p1557-1560, 4p
- Publication Year :
- 1991
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 38
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 93118075
- Full Text :
- https://doi.org/10.1109/16.81654