A novel cap-annealing technique using a WN/sub x/ film as a capsulant in the refractory gate self-aligned GaAs MESFET fabrication process.

Details

Language :

English

ISSN :

00189383

Volume :

35

Issue :

11

Database :

Complementary Index

Journal :

IEEE Transactions on Electron Devices

Publication Type :

Academic Journal

Accession number :

93116826

Full Text :

https://doi.org/10.1109/16.7415