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High-speed BiCMOS technology with a buried twin well structure.
- Source :
- IEEE Transactions on Electron Devices; 1987, Vol. 34 Issue 6, p1304-1310, 7p
- Publication Year :
- 1987
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 34
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 93116253
- Full Text :
- https://doi.org/10.1109/T-ED.1987.23085