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IIIA-4 GaAs inversion-base bipolar transistor (GaAs IBT).

Authors :
Matsumoto, K.
Hayashi, Y.
Hashizume, N.
Takafumi Yao
Kato, M.
Miyashita, T.
Fukuhara, N.
Kinosada, T.
Hirashima, H.
Source :
IEEE Transactions on Electron Devices; 1986, Vol. 33 Issue 11, p1845-1845, 1p
Publication Year :
1986

Details

Language :
English
ISSN :
00189383
Volume :
33
Issue :
11
Database :
Complementary Index
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
93115944
Full Text :
https://doi.org/10.1109/T-ED.1986.22776