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Drain-induced barrier-lowering analysis in VSLI MOSFET devices using two-dimensional numerical simulations.
- Source :
- IEEE Transactions on Electron Devices; 1986, Vol. 33 Issue 11, p1745-1753, 9p
- Publication Year :
- 1986
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 33
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 93115905
- Full Text :
- https://doi.org/10.1109/T-ED.1986.22737