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Comparison of characteristics of n-channel and p-channel MOSFET's for VLSI's.

Authors :
Takeda, E.
Nakagome, Y.
Kume, H.
Suzuki, N.
Asai, S.
Source :
IEEE Transactions on Electron Devices; 1983, Vol. 30 Issue 6, p675-680, 6p
Publication Year :
1983

Details

Language :
English
ISSN :
00189383
Volume :
30
Issue :
6
Database :
Complementary Index
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
93114357
Full Text :
https://doi.org/10.1109/T-ED.1983.21188