Two-dimensional simulation of a high-voltage p-i-n diode with overhanging metallization.

Details

Language :

English

ISSN :

00189383

Volume :

28

Issue :

5

Database :

Complementary Index

Journal :

IEEE Transactions on Electron Devices

Publication Type :

Academic Journal

Accession number :

93113547

Full Text :

https://doi.org/10.1109/T-ED.1981.20378