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Film properties of MoSi2and their application to self-aligned MoSi2gate MOSFET.

Authors :
Mochizuki, T.
Tsujimaru, T.
Kashiwagi, M.
Nishi, Y.
Source :
IEEE Transactions on Electron Devices; 1980, Vol. 27 Issue 8, p1431-1435, 5p
Publication Year :
1980

Details

Language :
English
ISSN :
00189383
Volume :
27
Issue :
8
Database :
Complementary Index
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
93113222
Full Text :
https://doi.org/10.1109/T-ED.1980.20052