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Film properties of MoSi2and their application to self-aligned MoSi2gate MOSFET.
- Source :
- IEEE Transactions on Electron Devices; 1980, Vol. 27 Issue 8, p1431-1435, 5p
- Publication Year :
- 1980
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 27
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 93113222
- Full Text :
- https://doi.org/10.1109/T-ED.1980.20052