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Hot hole effect on surface-state density and minority-carrier generation rates in Si-MOS diodes measured by DLTS.
- Source :
- IEEE Transactions on Electron Devices; 1980, Vol. 27 Issue 7, p1238-1243, 6p
- Publication Year :
- 1980
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 27
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 93113184
- Full Text :
- https://doi.org/10.1109/T-ED.1980.20014