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p-MOSFET parameters at cryogenic temperatures.
- Source :
- IEEE Transactions on Electron Devices; 1976, Vol. 23 Issue 1, p16-21, 6p
- Publication Year :
- 1976
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 23
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 93111511
- Full Text :
- https://doi.org/10.1109/T-ED.1976.18340