Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's.

Details

Language :

English

ISSN :

07413106

Volume :

18

Issue :

5

Database :

Complementary Index

Journal :

IEEE Electron Device Letters

Publication Type :

Academic Journal

Accession number :

92796609

Full Text :

https://doi.org/10.1109/55.568766