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Complementary high-voltage technology based on n-type CdSe:In and p-type Ge:Cu thin-film transistors.
- Source :
- IEEE Electron Device Letters; 1996, Vol. 17 Issue 12, p581-583, 3p
- Publication Year :
- 1996
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 17
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 92796535
- Full Text :
- https://doi.org/10.1109/55.545777