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Millimeter-Wave CMOS Power Amplifiers With High Output Power and Wideband Performances.
- Source :
- IEEE Transactions on Microwave Theory & Techniques; Dec2013 Part 2, Vol. 61 Issue 12, p4520-4533, 14p
- Publication Year :
- 2013
-
Abstract
- In this paper, we propose a design method of multi-way combining networks with impedance transformation for millimeter-wave (MMW) power amplifiers (PAs) to achieve high output power and wideband performance simultaneously in millimeter-wave frequency. Based on the proposed methodology, three power amplifiers are designed and fabricated in V-band, W-band, and D-band using 65-nm CMOS technology. With 1.2-V supply, the saturation powers of these power amplifiers are 23.2 dBm, 18 dBm and 13.2 dBm at 64 GHz, 90 GHz, and 140 GHz, with 25.1-GHz, 26-GHz, and 30-GHz 3-dB bandwidth, respectively. Compared with the published MMW amplifiers, these PAs achieve high output power and wide band performances simultaneously, and the ouput power levels is the state-of-the-art performance at these frequencies. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189480
- Volume :
- 61
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Microwave Theory & Techniques
- Publication Type :
- Academic Journal
- Accession number :
- 92680966
- Full Text :
- https://doi.org/10.1109/TMTT.2013.2288223