Study of Terahertz Emission from Surfaces of Cu(InGa)Se2 Layers.

In this contribution, we report on investigations of THz emission from Cu(In,Ga)Se₂ layers, deposited from a single copper-deficient sputtering target. Emission from Cu(In,Ga)Se₂ layer surface and from multilayer structure with transparent ZnO layers were studied. It was determined that additional undoped ZnO layer reduces the amplitude of THz emission, while additional n-type ZnO layers increase the emission amplitude again. This effect can be attributed to stronger electric field in the heterostructure between p-type Cu(In,Ga)Se₂ and n-type ZnO layers. [ABSTRACT FROM AUTHOR]