Cite
Development of Ru/Ta/sub 2/O/sub 5//Ru capacitor technology for giga-scale DRAMs.
MLA
Jin-Won Kim, et al. “Development of Ru/Ta/Sub 2/O/Sub 5//Ru Capacitor Technology for Giga-Scale DRAMs.” International Electron Devices Meeting 1999 Technical Digest (Cat No99CH36318), Jan. 1999, pp. 793–96. EBSCOhost, https://doi.org/10.1109/IEDM.1999.824269.
APA
Jin-Won Kim, Sang-Don Nam, Seung-Hwan Lee, Seok-Jun Won, Wan-Don Kim, Cha-Young Yoo, Young-Wook Park, Sang-In Lee, & Moon-Yong Lee. (1999). Development of Ru/Ta/sub 2/O/sub 5//Ru capacitor technology for giga-scale DRAMs. International Electron Devices Meeting 1999 Technical Digest (Cat No99CH36318), 793–796. https://doi.org/10.1109/IEDM.1999.824269
Chicago
Jin-Won Kim, Sang-Don Nam, Seung-Hwan Lee, Seok-Jun Won, Wan-Don Kim, Cha-Young Yoo, Young-Wook Park, Sang-In Lee, and Moon-Yong Lee. 1999. “Development of Ru/Ta/Sub 2/O/Sub 5//Ru Capacitor Technology for Giga-Scale DRAMs.” International Electron Devices Meeting 1999 Technical Digest (Cat No99CH36318), January, 793–96. doi:10.1109/IEDM.1999.824269.