An 80 nm dual-gate CMOS with shallow extensions formed after activation annealing and SALICIDE.

Details

Language :

English

ISBNs :

9780780354104

Database :

Complementary Index

Journal :

International Electron Devices Meeting 1999 Technical Digest (Cat No99CH36318)

Publication Type :

Conference

Accession number :

92555827

Full Text :

https://doi.org/10.1109/IEDM.1999.824236