Back to Search
Start Over
Determination of stress in shallow trench isolation for deep submicron MOS devices by UV Raman spectroscopy.
- Source :
- International Electron Devices Meeting 1999 Technical Digest (Cat No99CH36318); 1999, p357-360, 4p
- Publication Year :
- 1999
Details
- Language :
- English
- ISBNs :
- 9780780354104
- Database :
- Complementary Index
- Journal :
- International Electron Devices Meeting 1999 Technical Digest (Cat No99CH36318)
- Publication Type :
- Conference
- Accession number :
- 92555760
- Full Text :
- https://doi.org/10.1109/IEDM.1999.824169