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Low dislocation density 3-inch Si doped GaAs crystals by Vertical Boat growth.

Authors :
Hagi, Y.
Kawarabayashi, S.
Inoue, T.
Nakai, R.
Kohno, J.
Kawase, T.
Tatsumi, M.
Source :
Proceedings of Semiconducting & Semi-Insulating Materials Conference; 1996, p279-282, 4p
Publication Year :
1996

Details

Language :
English
ISBNs :
9780780331792
Database :
Complementary Index
Journal :
Proceedings of Semiconducting & Semi-Insulating Materials Conference
Publication Type :
Conference
Accession number :
92496868
Full Text :
https://doi.org/10.1109/SIM.1996.571099