High fill factor and progressive scan PtSi Schottky-barrier IR-CCD image sensor having new wiring structure over photodiodes.

MLA

Tohyama, S., et al. “High Fill Factor and Progressive Scan PtSi Schottky-Barrier IR-CCD Image Sensor Having New Wiring Structure over Photodiodes.” Proceedings of IEEE International Electron Devices Meeting, Jan. 1993, pp. 183–86. EBSCOhost, https://doi.org/10.1109/IEDM.1993.347370.

APA

Tohyama, S., Masubuchi, K., Konuma, K., Azuma, H., Tanabe, A., Utsumi, H., Teranishi, N., Takano, E., Yamagata, S., Hijikawa, M., Sahara, H., Muramatsu, T., Seki, T., Ono, T., & Goto, H. (1993). High fill factor and progressive scan PtSi Schottky-barrier IR-CCD image sensor having new wiring structure over photodiodes. Proceedings of IEEE International Electron Devices Meeting, 183–186. https://doi.org/10.1109/IEDM.1993.347370

Chicago

Tohyama, S., K. Masubuchi, K. Konuma, H. Azuma, A. Tanabe, H. Utsumi, N. Teranishi, et al. 1993. “High Fill Factor and Progressive Scan PtSi Schottky-Barrier IR-CCD Image Sensor Having New Wiring Structure over Photodiodes.” Proceedings of IEEE International Electron Devices Meeting, January, 183–86. doi:10.1109/IEDM.1993.347370.