Recent advances in the performance of GaAs- and InP-based two-terminal devices as high-power millimeter-wave sources.

MLA

Haddad, G. I., and H. Eisele. “Recent Advances in the Performance of GaAs- and InP-Based Two-Terminal Devices as High-Power Millimeter-Wave Sources.” ICMWFST’96 1996 4th International Conference on Millimeter Wave & Far Infrared Science & Technology Proceedings, Jan. 1996, pp. 2–5. EBSCOhost, https://doi.org/10.1109/ICMWFT.1996.574323.

APA

Haddad, G. I., & Eisele, H. (1996). Recent advances in the performance of GaAs- and InP-based two-terminal devices as high-power millimeter-wave sources. ICMWFST’96 1996 4th International Conference on Millimeter Wave & Far Infrared Science & Technology Proceedings, 2–5. https://doi.org/10.1109/ICMWFT.1996.574323

Chicago

Haddad, G.I., and H. Eisele. 1996. “Recent Advances in the Performance of GaAs- and InP-Based Two-Terminal Devices as High-Power Millimeter-Wave Sources.” ICMWFST’96 1996 4th International Conference on Millimeter Wave & Far Infrared Science & Technology Proceedings, January, 2–5. doi:10.1109/ICMWFT.1996.574323.