Analysis of PAE 50% highly linear characteristics of new structure transistor "self-aligned gate PHEMT" for W-CDMA application.

Details

Language :

English

ISBNs :

9780780355859

Database :

Complementary Index

Journal :

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 21st Annual Technical Digest 1999 (Cat No99CH36369)

Publication Type :

Conference

Accession number :

92471935

Full Text :

https://doi.org/10.1109/GAAS.1999.803743