A symmetric GaAs MESFET structure with a lightly doped deep drain for linear amplifiers operating with a single low-voltage supply.

Details

Language :

English

ISBNs :

9780780335042

Database :

Complementary Index

Journal :

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 18th Annual Technical Digest 1996

Publication Type :

Conference

Accession number :

92471761

Full Text :

https://doi.org/10.1109/GAAS.1996.567877