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Analysis of surface-related deep-trap effects on gate-lag phenomena in GaAs MESFETs.
- Source :
- GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 18th Annual Technical Digest 1996; 1996, p175-178, 4p
- Publication Year :
- 1996
Details
- Language :
- English
- ISBNs :
- 9780780335042
- Database :
- Complementary Index
- Journal :
- GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 18th Annual Technical Digest 1996
- Publication Type :
- Conference
- Accession number :
- 92471747
- Full Text :
- https://doi.org/10.1109/GAAS.1996.567844