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Analysis of surface-related deep-trap effects on gate-lag phenomena in GaAs MESFETs.

Authors :
Horio, K.
Yamada, T.
Source :
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 18th Annual Technical Digest 1996; 1996, p175-178, 4p
Publication Year :
1996

Details

Language :
English
ISBNs :
9780780335042
Database :
Complementary Index
Journal :
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 18th Annual Technical Digest 1996
Publication Type :
Conference
Accession number :
92471747
Full Text :
https://doi.org/10.1109/GAAS.1996.567844