Degradation of breakdown voltage of DMOS due to arsenic implant damage.

Authors :: Shibib, M.A.
Siket, J.M.
Tse, P.K.
Hsieh, C.-M.
Source :: Proceedings of the 10th International Symposium on Power Semiconductor Devices & ICs ISPSD'98 (IEEE Cat No98CH36212); 1998, p337-342, 6p
Publication Year :: 1998

Language :: English
ISBNs :: 9780780347526
Database :: Complementary Index
Journal :: Proceedings of the 10th International Symposium on Power Semiconductor Devices & ICs ISPSD'98 (IEEE Cat No98CH36212)
Publication Type :: Conference
Accession number :: 92456002
Full Text :: https://doi.org/10.1109/ISPSD.1998.702705