Cite
p/sup -/-layer punch-through structure with high concentration p-emitter for a light-triggered thyristor.
MLA
Katoh, S., et al. “P/Sup -/-Layer Punch-through Structure with High Concentration p-Emitter for a Light-Triggered Thyristor.” Proceedings of the 10th International Symposium on Power Semiconductor Devices & ICs ISPSD’98 (IEEE Cat No98CH36212), Jan. 1998, pp. 225–28. EBSCOhost, https://doi.org/10.1109/ISPSD.1998.702674.
APA
Katoh, S., Choi, J. H., Yokota, T., Watanabe, A., Yamaguchi, T., & Saito, K. (1998). p/sup -/-layer punch-through structure with high concentration p-emitter for a light-triggered thyristor. Proceedings of the 10th International Symposium on Power Semiconductor Devices & ICs ISPSD’98 (IEEE Cat No98CH36212), 225–228. https://doi.org/10.1109/ISPSD.1998.702674
Chicago
Katoh, S., J.H. Choi, T. Yokota, A. Watanabe, T. Yamaguchi, and K. Saito. 1998. “P/Sup -/-Layer Punch-through Structure with High Concentration p-Emitter for a Light-Triggered Thyristor.” Proceedings of the 10th International Symposium on Power Semiconductor Devices & ICs ISPSD’98 (IEEE Cat No98CH36212), January, 225–28. doi:10.1109/ISPSD.1998.702674.