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InGaP/GaAs power HBTs with a low bias voltage.
- Source :
- Proceedings of International Electron Devices Meeting; 1995, p791-794, 4p
- Publication Year :
- 1995
Details
- Language :
- English
- ISBNs :
- 9780780327009
- Database :
- Complementary Index
- Journal :
- Proceedings of International Electron Devices Meeting
- Publication Type :
- Conference
- Accession number :
- 92448944
- Full Text :
- https://doi.org/10.1109/IEDM.1995.499336