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High Power-Added Efficiency Measured At 1.3 And 20 Ghz Using a GaAs Permeable Base Transistor*.
- Source :
- IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices & Circuits, 1987 Proceedings; 1987, p307-315, 9p
- Publication Year :
- 1987
Details
- Language :
- English
- Database :
- Complementary Index
- Journal :
- IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices & Circuits, 1987 Proceedings
- Publication Type :
- Conference
- Accession number :
- 92423216
- Full Text :
- https://doi.org/10.1109/CORNEL.1987.721241