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0.15 /spl mu/m InGaAs/AlGaAs/GaAs HEMT production process for high performance and high yield V-band power MMICs.

Authors :
Lai, R.
Biedenbender, M.
Lee, J.
Tan, K.
Streit, D.
Liu, P.H.
Hoppe, M.
Allen, B.
Source :
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995; 1995, p105-108, 4p
Publication Year :
1995

Details

Language :
English
ISBNs :
9780780329669
Database :
Complementary Index
Journal :
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995
Publication Type :
Conference
Accession number :
92393540
Full Text :
https://doi.org/10.1109/GAAS.1995.528972