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0.15 /spl mu/m InGaAs/AlGaAs/GaAs HEMT production process for high performance and high yield V-band power MMICs.
- Source :
- GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995; 1995, p105-108, 4p
- Publication Year :
- 1995
Details
- Language :
- English
- ISBNs :
- 9780780329669
- Database :
- Complementary Index
- Journal :
- GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995
- Publication Type :
- Conference
- Accession number :
- 92393540
- Full Text :
- https://doi.org/10.1109/GAAS.1995.528972