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Dopant Activation and Defect Annihilation of Heavily Doped Arsenic Implanted Silicon Layers.
- Source :
- ESSDERC '89: 19th European Solid State Device Research Conference; 1989, p225-228, 4p
- Publication Year :
- 1989
Details
- Language :
- English
- ISBNs :
- 9780387510002
- Database :
- Complementary Index
- Journal :
- ESSDERC '89: 19th European Solid State Device Research Conference
- Publication Type :
- Conference
- Accession number :
- 92388764