Back to Search Start Over

Three-dimensional simulation of VLSI MOSFET's: The three dimensional simulation program WATMOS.

Authors :
Chamberlain, S.G.
Husain, A.
Source :
1981 International Electron Devices Meeting; 1981, p592-595, 4p
Publication Year :
1981

Details

Language :
English
Database :
Complementary Index
Journal :
1981 International Electron Devices Meeting
Publication Type :
Conference
Accession number :
92381357
Full Text :
https://doi.org/10.1109/IEDM.1981.190154