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Characteristics and thoery of a silicon carbide P+-I-N photodiode.
- Source :
- 1967 International Electron Devices Meeting; 1967, p56-56, 1p
- Publication Year :
- 1967
Details
- Language :
- English
- Database :
- Complementary Index
- Journal :
- 1967 International Electron Devices Meeting
- Publication Type :
- Conference
- Accession number :
- 92372236
- Full Text :
- https://doi.org/10.1109/IEDM.1967.187816