Graded-GaAs/sub 1-x/P/sub x/ base in heterojunction bipolar transistors with InGaP emitters.

Details

Language :

English

ISBNs :

9780780321472

Database :

Complementary Index

Journal :

Seventh International Conference on Indium Phosphide & Related Materials

Publication Type :

Conference

Accession number :

92349844

Full Text :

https://doi.org/10.1109/ICIPRM.1995.522178