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AlGaAsSb buffer/barrier layer on GaAs substrate for InAs channel with high electron properties.

Authors :
Miya, S.
Muramatsu, S.
Kuze, N.
Nagase, K.
Iwabuchi, T.
Ichii, A.
Ozaki, M.
Shibasaki, I.
Source :
Seventh International Conference on Indium Phosphide & Related Materials; 1995, p440-443, 4p
Publication Year :
1995

Details

Language :
English
ISBNs :
9780780321472
Database :
Complementary Index
Journal :
Seventh International Conference on Indium Phosphide & Related Materials
Publication Type :
Conference
Accession number :
92349840
Full Text :
https://doi.org/10.1109/ICIPRM.1995.522174