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AlGaAsSb buffer/barrier layer on GaAs substrate for InAs channel with high electron properties.
- Source :
- Seventh International Conference on Indium Phosphide & Related Materials; 1995, p440-443, 4p
- Publication Year :
- 1995
Details
- Language :
- English
- ISBNs :
- 9780780321472
- Database :
- Complementary Index
- Journal :
- Seventh International Conference on Indium Phosphide & Related Materials
- Publication Type :
- Conference
- Accession number :
- 92349840
- Full Text :
- https://doi.org/10.1109/ICIPRM.1995.522174