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Growth of GaN and AlGaN by high temperature vapor phase epitaxy.
- Source :
- Semiconducting & Insulating Materials 1998 Proceedings of the 10th Conference on Semiconducting & Insulating Materials (SIMC-X) (Cat No98CH36159); 1999, p11-14, 4p
- Publication Year :
- 1999
Details
- Language :
- English
- ISBNs :
- 9780780343542
- Database :
- Complementary Index
- Journal :
- Semiconducting & Insulating Materials 1998 Proceedings of the 10th Conference on Semiconducting & Insulating Materials (SIMC-X) (Cat No98CH36159)
- Publication Type :
- Conference
- Accession number :
- 92348855
- Full Text :
- https://doi.org/10.1109/SIM.1998.785066