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Improving the gate oxide integrity of very high voltage MCT and IGBT devices by external gettering of metal impurities.
- Source :
- Proceedings of the 6th International Symposium on Power Semiconductor Devices & Ics; 1994, p213-218, 6p
- Publication Year :
- 1994
Details
- Language :
- English
- ISBNs :
- 9780780314948
- Database :
- Complementary Index
- Journal :
- Proceedings of the 6th International Symposium on Power Semiconductor Devices & Ics
- Publication Type :
- Conference
- Accession number :
- 92312158
- Full Text :
- https://doi.org/10.1109/ISPSD.1994.583725