Annealing behaviour of ion implanted aluminum in silicon.

Authors :: Stockmeier, T.
Braesch, P.
Halder, E.
Kluge-Weiss, P.
Roggwiller, P.
Stucki, F.
Source :: Proceedings of the 2nd International Symposium on Power Semiconductor Devices & Ics ISPSD '90; 1990, p169-173, 5p
Publication Year :: 1990

Language :: English
Database :: Complementary Index
Journal :: Proceedings of the 2nd International Symposium on Power Semiconductor Devices & Ics ISPSD '90
Publication Type :: Conference
Accession number :: 92306994
Full Text :: https://doi.org/10.1109/ISPSD.1990.991079