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A 50-GHz 0.25-/spl mu/m implanted-base high-energy implanted-collector complementary modular BiCMOS (HEICBiC) technology for low-power wireless communication VLSIs.

Authors :
Yih-Feng Chyan
Carroll, M.S.
Ivanov, T.G.
Chen, A.S.
Nagy, W.J.
Chaudhry, S.
Dail, R.W.
Archer, V.D.
Ng, K.K.
Martin, S.
Minseok Oh
Frei, M.R.
Kizilyalli, I.C.
Huang, R.Y.
Thoma, M.J.
King, C.A.
Cochran, W.T.
Lee, K.H.
Source :
Proceedings of the 1998 Bipolar/BiCMOS Circuits & Technology Meeting (Cat No98CH36198); 1998, p128-131, 4p
Publication Year :
1998

Details

Language :
English
ISBNs :
9780780344976
Database :
Complementary Index
Journal :
Proceedings of the 1998 Bipolar/BiCMOS Circuits & Technology Meeting (Cat No98CH36198)
Publication Type :
Conference
Accession number :
92296424
Full Text :
https://doi.org/10.1109/BIPOL.1998.741900