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A novel 30 V p-channel trench gate power MOSFET with ultra low on-state-resistance at low-gate-voltage.

Authors :
Narazaki, A.
Hisamoto, Y.
Tadokoro, C.
Takeda, M.
Hagino, H.
Source :
Proceedings of 9th International Symposium on Power Semiconductor Devices & IC's; 1997, p285-288, 4p
Publication Year :
1997

Details

Language :
English
ISBNs :
9780780339934
Database :
Complementary Index
Journal :
Proceedings of 9th International Symposium on Power Semiconductor Devices & IC's
Publication Type :
Conference
Accession number :
92291749
Full Text :
https://doi.org/10.1109/ISPSD.1997.601495