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Carrier injection enhancement effect of high voltage MOS devices-device physics and design concept.

Authors :
Omura, I.
Ogura, T.
Sugiyama, K.
Ohashi, H.
Source :
Proceedings of 9th International Symposium on Power Semiconductor Devices & IC's; 1997, p217-220, 4p
Publication Year :
1997

Details

Language :
English
ISBNs :
9780780339934
Database :
Complementary Index
Journal :
Proceedings of 9th International Symposium on Power Semiconductor Devices & IC's
Publication Type :
Conference
Accession number :
92291732
Full Text :
https://doi.org/10.1109/ISPSD.1997.601476