Development of a low-impedance traveling wave amplifier based on InAlAs/InGaAs/InP-HFET for 20 Gb/s optoelectronic receivers.

MLA

Van Waasen, S., et al. “Development of a Low-Impedance Traveling Wave Amplifier Based on InAlAs/InGaAs/InP-HFET for 20 Gb/s Optoelectronic Receivers.” Proceedings of 8th International Conference on Indium Phosphide & Related Materials, Jan. 1996, pp. 642–45. EBSCOhost, https://doi.org/10.1109/ICIPRM.1996.492331.

APA

Van Waasen, S., Janssen, G., Bertenburg, R. M., Reuter, R., & Tegude, F. J. (1996). Development of a low-impedance traveling wave amplifier based on InAlAs/InGaAs/InP-HFET for 20 Gb/s optoelectronic receivers. Proceedings of 8th International Conference on Indium Phosphide & Related Materials, 642–645. https://doi.org/10.1109/ICIPRM.1996.492331

Chicago

Van Waasen, S., G. Janssen, R.M. Bertenburg, R. Reuter, and F.J. Tegude. 1996. “Development of a Low-Impedance Traveling Wave Amplifier Based on InAlAs/InGaAs/InP-HFET for 20 Gb/s Optoelectronic Receivers.” Proceedings of 8th International Conference on Indium Phosphide & Related Materials, January, 642–45. doi:10.1109/ICIPRM.1996.492331.