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Annealing characteristics of radiation induced leakage in SOS MOSFETs.
- Source :
- Proceedings of 1993 IEEE International SOI Conference; 1993, p84-85, 2p
- Publication Year :
- 1993
Details
- Language :
- English
- ISBNs :
- 9780780313460
- Database :
- Complementary Index
- Journal :
- Proceedings of 1993 IEEE International SOI Conference
- Publication Type :
- Conference
- Accession number :
- 92260736
- Full Text :
- https://doi.org/10.1109/SOI.1993.344580