Back to Search
Start Over
Novel InP/InGaAs D-HBTs with selective multisteps MOCVD regrowth techniques for high-speed application.
- Source :
- International Electron Devices Meeting IEDM Technical Digest; 1997, p747-750, 4p
- Publication Year :
- 1997
Details
- Language :
- English
- ISBNs :
- 9780780341005
- Database :
- Complementary Index
- Journal :
- International Electron Devices Meeting IEDM Technical Digest
- Publication Type :
- Conference
- Accession number :
- 92188243
- Full Text :
- https://doi.org/10.1109/IEDM.1997.650490