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Novel InP/InGaAs D-HBTs with selective multisteps MOCVD regrowth techniques for high-speed application.

Authors :
Nomura, T.
Ohkubo, M.
Sekiguchi, T.
Ninomiya, T.
Source :
International Electron Devices Meeting IEDM Technical Digest; 1997, p747-750, 4p
Publication Year :
1997

Details

Language :
English
ISBNs :
9780780341005
Database :
Complementary Index
Journal :
International Electron Devices Meeting IEDM Technical Digest
Publication Type :
Conference
Accession number :
92188243
Full Text :
https://doi.org/10.1109/IEDM.1997.650490