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Multi-level metal CMOS manufacturing with deuterium for improved hot carrier reliability.
- Source :
- International Electron Devices Meeting 1998 Technical Digest (Cat No98CH36217); 1998, p935-938, 4p
- Publication Year :
- 1998
Details
- Language :
- English
- ISBNs :
- 9780780347748
- Database :
- Complementary Index
- Journal :
- International Electron Devices Meeting 1998 Technical Digest (Cat No98CH36217)
- Publication Type :
- Conference
- Accession number :
- 92188045
- Full Text :
- https://doi.org/10.1109/IEDM.1998.746508