Sub-5 nm multiple-thickness gate oxide technology using oxygen implantation.

Details

Language :

English

ISBNs :

9780780347748

Database :

Complementary Index

Journal :

International Electron Devices Meeting 1998 Technical Digest (Cat No98CH36217)

Publication Type :

Conference

Accession number :

92187964

Full Text :

https://doi.org/10.1109/IEDM.1998.746426