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Modeling of high energy electrons in n-MOSFETs.

Authors :
Fiegna, C.
Sangiorgi, E.
Venturi, F.
Abramo, A.
Ricco, B.
Source :
International Electron Devices Meeting 1991 Technical Digest; 1991, p119-122, 4p
Publication Year :
1991

Details

Language :
English
ISBNs :
9780780302433
Database :
Complementary Index
Journal :
International Electron Devices Meeting 1991 Technical Digest
Publication Type :
Conference
Accession number :
92187826
Full Text :
https://doi.org/10.1109/IEDM.1991.235486