Use of electron-beam irradiation to study performance degradation of bipolar transistors after reverse-bias stress.

Details

Language :

English

ISBNs :

9780780302433

Database :

Complementary Index

Journal :

International Electron Devices Meeting 1991 Technical Digest

Publication Type :

Conference

Accession number :

92187626

Full Text :

https://doi.org/10.1109/IEDM.1991.235286