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A new stacked cell structure for giga-bit DRAMs using vertical ultra-thin SOI (DELTA) MOSFETs.
- Source :
- International Electron Devices Meeting 1991 Technical Digest; 1991, p959-961, 3p
- Publication Year :
- 1991
Details
- Language :
- English
- ISBNs :
- 9780780302433
- Database :
- Complementary Index
- Journal :
- International Electron Devices Meeting 1991 Technical Digest
- Publication Type :
- Conference
- Accession number :
- 92187606
- Full Text :
- https://doi.org/10.1109/IEDM.1991.235266