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A new stacked cell structure for giga-bit DRAMs using vertical ultra-thin SOI (DELTA) MOSFETs.

Authors :
Hisamoto, D.
Kimura, S.
Kaga, T.
Nakagome, Y.
Isoda, M.
Nishida, T.
Takeda, E.
Source :
International Electron Devices Meeting 1991 Technical Digest; 1991, p959-961, 3p
Publication Year :
1991

Details

Language :
English
ISBNs :
9780780302433
Database :
Complementary Index
Journal :
International Electron Devices Meeting 1991 Technical Digest
Publication Type :
Conference
Accession number :
92187606
Full Text :
https://doi.org/10.1109/IEDM.1991.235266